【科研干货】电子元器件失效分析

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检查外观"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"5. 证实失效"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"6. 失效点定位"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"7. 失效点解析"},{"attributes":{"align":"justify"},"insert":"\n\n"},{"attributes":{"bold":true},"insert":"鉴别失效模式"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"\t最直接的失效模式是开路、短路、时开时断、功能异常、参数漂移等"},{"attributes":{"align":"justify"},"insert":"\n"},{"attributes":{"bold":true},"insert":"失效现象的观察与判定"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"\t（1）外观检查"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"\t检测手段：肉眼，体式显微镜，金相显微镜，测量显微镜，扫描电镜+EDS(如果需要化学成分分析）"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"\t测试内容：机械损伤、腐蚀、管脚桥接、处于引脚之间的封装表面上的污染物（可能引起漏电或短路）、标记完整性；外观的完整性观察如微裂纹。黑胶和引线框架封接处的分层、焊缝上的裂纹、沙眼、空洞、焊区内的小缺陷等，EOS/热效应引起的器件变色。"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":{"image":"https://files.eteforum.com/202308/23a1659712523995.png"}},{"attributes":{"align":"justify"},"insert":"\n\n"},{"attributes":{"color":"#3e3e3e"},"insert":"金相显微镜"},{"attributes":{"align":"justify"},"insert":"\n"},{"attributes":{"color":"#3e3e3e"},"insert":"设备型号：LV150N"},{"attributes":{"align":"justify"},"insert":"\n"},{"attributes":{"color":"#3e3e3e"},"insert":"放大倍率：50倍到1000倍"},{"attributes":{"align":"justify"},"insert":"\n"},{"attributes":{"color":"#3e3e3e"},"insert":"分辨率：0.2um"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":{"image":"https://files.eteforum.com/202308/a9ab7a1080098fde.png"}},{"attributes":{"align":"justify"},"insert":"\n\n"},{"attributes":{"color":"#3e3e3e"},"insert":"体式显微镜"},{"attributes":{"align":"justify"},"insert":"\n"},{"attributes":{"color":"#3e3e3e"},"insert":"设备型号："},{"attributes":{"align":"justify"},"insert":"\n"},{"attributes":{"color":"#3e3e3e"},"insert":"蔡司Discovery.V20"},{"attributes":{"align":"justify"},"insert":"\n"},{"attributes":{"color":"#3e3e3e"},"insert":"放大倍率：几倍到150倍"},{"attributes":{"align":"justify"},"insert":"\n\n"},{"insert":{"image":"https://files.eteforum.com/202308/ac5e9b18baf141db.png"}},{"attributes":{"align":"justify"},"insert":"\n\n"},{"insert":"测量显微镜："},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"设备型号：OLYMPUS-DSX500"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"放大倍率：50倍到1000倍"},{"attributes":{"align":"justify"},"insert":"\n\n"},{"insert":"（2）电性能测试"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"\t检测手段：半导体参数测试仪，探针台,示波器，ATE自动测试仪"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"\t测试内容：判断失效现象是否与原始资料相符，分析失效现象可能与哪一部分有关，具体有连接性失效、电参数失效和功能失效。简单的连接性测试和参数测试，结合物理失效分析技术，可获得令人满意的失效分析结果。"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":{"image":"https://files.eteforum.com/202308/1ad55165f46388ba.png"}},{"attributes":{"align":"justify"},"insert":"\n\n"},{"insert":"IV曲线测量仪"},{"attributes":{"align":"justify"},"insert":"\n"},{"attributes":{"color":"#3e3e3e"},"insert":"设备型号：CT2-512X4S"},{"attributes":{"align":"justify"},"insert":"\n"},{"attributes":{"color":"#3e3e3e"},"insert":"最大电压：10V"},{"attributes":{"align":"justify"},"insert":"\n"},{"attributes":{"color":"#3e3e3e"},"insert":"最大电流：100mA"},{"attributes":{"align":"justify"},"insert":"\n\n"},{"attributes":{"bold":true},"insert":"证实失效"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"\t通过外部电性测试来判断器件是否失效。"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"\t检测手段：半导体参数测试仪，探针台,示波器，ATE自动测试仪"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"\t测试内容：使用不同的测试条件，尽量模拟可能的失效状况。对Soft failure或间歇性失效，测试时只改变其中一个参数，如电压、温度、频率、脉冲宽度等，来表征器件的好/坏界限和判断器件正常工作的区间。"},{"attributes":{"align":"justify"},"insert":"\n\n"},{"attributes":{"bold":true},"insert":"失效点定位"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"\t通过外部电性测试来判断器件是否失效。"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"\t（1）失效点定位"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"\t\t2D X-ray/3D CT :确定键合位置与引线调整不良，芯片或衬底安装中的空隙、开裂、虚焊、开焊等。"},{"attributes":{"align":"justify"},"insert":"\n\n\n"},{"attributes":{"color":"#3e3e3e"},"insert":"X射线检测系统"},{"attributes":{"align":"justify"},"insert":"\n"},{"attributes":{"color":"#3e3e3e"},"insert":"设备型号：Phoenix X|aminer"},{"attributes":{"align":"justify"},"insert":"\n"},{"attributes":{"color":"#3e3e3e"},"insert":"2D分辨率：0.5um；"},{"attributes":{"align":"justify"},"insert":"\n"},{"attributes":{"color":"#3e3e3e"},"insert":"3D分辨率：1.5um;  "},{"attributes":{"align":"justify"},"insert":"\n\n"},{"insert":"\t超声波扫描显微镜（SAT）：检测空洞、裂缝、不良粘接和分层剥离等缺陷。"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":{"image":"https://files.eteforum.com/202308/d5875a57913a672c.png"}},{"attributes":{"align":"justify"},"insert":"\n\n"},{"insert":"超声波扫描显微镜"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"设备型号：Sonosca-SAM D9000"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"探头频率：15MHZ、30MHZ、 50MHZ、230MHZ"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"分辨率：5um"},{"attributes":{"align":"justify"},"insert":"\n\n"},{"insert":"\t微光显微镜（EMMI）：检测芯片上失效部位因电子-空穴复合产生的发光点"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":{"image":"https://files.eteforum.com/202308/c1eac2fe7f97056a.png"}},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"微光显微镜"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"设备型号：SEMICAPS SOM 1100"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"InGaAs红外波长：900-1700nm"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"X-Y-Z 移动范围：50*50*100 毫米"},{"attributes":{"align":"justify"},"insert":"\n\n"},{"insert":"\t激光显微镜(obirch)：主要侦测IC内部所放出光子，故障点定位、金属层缺陷。"},{"attributes":{"align":"justify"},"insert":"\n\n\n"},{"insert":"激光显微镜"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"设备型号：SEMICAPS SOM 1100"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"扫描像素：2048*2048 pixel"},{"attributes":{"align":"justify"},"insert":"\n\n"},{"attributes":{"bold":true},"insert":"（2）失效点定位预处理"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"\t化学自动开封：塑料器件喷射腐蚀开封：一般用于用于环氧树脂密封的器件，即对器件进行部分开封，暴露芯片表面或背面，但保留芯片、管脚和内引线和压焊点的完整性寄电学性能完整，为后续失效定位做准备，因此也被归为失效定位的范畴内。此步骤的关键是保持器件的电学特性开封前后的一致性。"},{"attributes":{"align":"justify"},"insert":"\n\n"},{"attributes":{"bold":true},"insert":"失效点解析"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"\t通过开封，研磨（CP/MP），干湿法剥层，一系列离子束（FIB）,电子束（SEM,TEM）,能谱（EDX）和表面分析（Auger，XPS，SIMS等）设备观察失效部位的形状、大小、位置、颜色、机械和物理结构、特性、成分及分布等，综合表征与上述失效模式有关的各种失效现象。"},{"attributes":{"align":"justify"},"insert":"\n\n"},{"insert":{"image":"https://files.eteforum.com/202308/1e022cbf77299bfb.png"}},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"聚焦离子束FIB"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"设备型号：HELIOS NA OL B600i"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"离子束加速电压：500V-30kV;"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"束流强度：1pA-65Na"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"交叉点分辨率：4.5nm@30kv"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":{"image":"https://files.eteforum.com/202308/13217bb6291cb181.png"}},{"attributes":{"align":"justify"},"insert":"\n\n"},{"insert":"精研一体机"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"设备型号：Leica EM TXP"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"从300到20000 rpm 的可变速度"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"点停式调整装置可实现在纵向上旋转"},{"attributes":{"align":"justify"},"insert":"\n\n\n"},{"attributes":{"color":"#3e3e3e"},"insert":"等离子去层仪"},{"attributes":{"align":"justify"},"insert":"\n"},{"attributes":{"color":"#3e3e3e"},"insert":"设备型号：RIE-10NR"},{"attributes":{"align":"justify"},"insert":"\n"},{"attributes":{"color":"#3e3e3e"},"insert":"刻蚀速率：70-80nm"},{"attributes":{"align":"justify"},"insert":"\n\n\n"},{"insert":"SEM扫描显微镜"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"设备型号：NOVA NANOSEM 450"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"电子枪：高亮度肖特基场发射电子枪"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"分辨率：0.9nm@15KeV"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"        1.4nm@1KeV"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"        减速模式1.2nm@1KeV"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"最大样品尺寸：180mm(不能倾转样品)"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"倾转角度：-60°至 +90°"},{"attributes":{"align":"justify"},"insert":"\n\n"},{"attributes":{"bold":true},"insert":"SEM扫描结果图"},{"attributes":{"align":"justify"},"insert":"\n\n"},{"insert":{"image":"https://files.eteforum.com/202308/0165bcfb56b7530a.png"}},{"attributes":{"align":"justify"},"insert":"\n\n\n"},{"attributes":{"bold":true},"insert":"三．实际案列展示"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"\t1. EMMI定位热点，对热点位置进行FIB离子束切割定位失效"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"\t\t（\t1）在EMMI下，加压10V,电流为3.5mA,物镜放大5X，曝光时间2s，抓到热点；"},{"attributes":{"align":"justify"},"insert":"\n\n"},{"insert":{"image":"https://files.eteforum.com/202308/902d1ec9c19932e0.png"}},{"attributes":{"align":"justify"},"insert":"\n\n"},{"insert":"\t（2）在EMMI下，加压10V,电流为3.5mA，物镜放大20X，曝光时间2s，定位热点；"},{"attributes":{"align":"justify"},"insert":"\n\n\n\n"},{"insert":"\t（3）在FIB下，WD=13.1mm，30.00kv，3000X,发现异常点；"},{"attributes":{"align":"justify"},"insert":"\n\n\n\n"},{"insert":"\t（4）在FIB下，加压10V,WD=5.4mm电压10kv，离子束切割异常点。"},{"attributes":{"align":"justify"},"insert":"\n\n\n\n"},{"insert":"\t2. IV对比曲线异常，对失效品开封去层后定位失效"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"\t\t（1）在IV曲线测试仪下，测PIN1脚对PIN2,3,4引脚发现良品与失效品存在明显差异；"},{"attributes":{"align":"justify"},"insert":"\n\n"},{"insert":{"image":"https://files.eteforum.com/202308/de626db48f4f670c.png"}},{"attributes":{"align":"justify"},"insert":"\n\n\n"},{"insert":"\t（2）对失效品开封去层后发现异常点。"},{"attributes":{"align":"justify"},"insert":"\n\n"},{"insert":{"image":"https://files.eteforum.com/202308/d12287b0d4fac690.png"}},{"attributes":{"align":"justify"},"insert":"\n\n\n"},{"insert":"四．米格失效分析能力表"},{"attributes":{"align":"justify"},"insert":"\n\n\n"},{"attributes":{"color":"#9a9a9a"},"insert":"来源于米格实验室，作者米格小编"},{"attributes":{"align":"justify"},"insert":"\n\n"},{"attributes":{"color":"var(--weui-FG-0)"},"insert":"半导体工程师"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"半导体经验分享，半导体成果交流，半导体信息发布。半导体行业动态，半导体从业者职业规划，芯片工程师成长历程。"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"\n"}]