失效分析从何入手？

[{"attributes":{"color":"var(--weui-FG-2)"},"insert":"失效分析 赵工"},{"insert":" "},{"attributes":{"color":"var(--weui-LINK)"},"insert":"半导体工程师"},{"insert":" "},{"attributes":{"color":"var(--weui-FG-2)"},"insert":"2023-06-16 09:49"},{"insert":" "},{"attributes":{"color":"var(--weui-FG-2)"},"insert":"发表于北京"},{"insert":"\n\n"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":{"image":"https://files.eteforum.com/202306/48c8a0a1087eb152.jpg"}},{"attributes":{"align":"justify"},"insert":"\n\n"},{"attributes":{"align":"center"},"insert":"\n"},{"insert":"北软芯片失效分析实验室"},{"attributes":{"align":"center"},"insert":"\n"},{"insert":{"image":"https://files.eteforum.com/202306/14e6df8ab188014a.png"}},{"attributes":{"align":"center"},"insert":"\n"},{"attributes":{"align":"justify"},"insert":"\n"},{"attributes":{"color":"#3f3f3f"},"insert":"失效分析是为了查找失效原因，因为分析的某些步骤是破坏性的，不能重现，所以失效分析必须有计划有步骤地进行。为了防止在失效分析过程中把真正的失效因素或迹象遗漏掉，或引入新的失效因素，失效分析不仅需要十分小心地操作，而且还必须周密而科学地计划与安排，使每一步都能取得必要的信息。"},{"attributes":{"align":"justify"},"insert":"\n"},{"attributes":{"align":"center"},"insert":"\n"},{"attributes":{"color":"#3f3f3f","bold":true},"insert":"失效分析程序的基本原则"},{"attributes":{"align":"center"},"insert":"\n"},{"attributes":{"align":"justify"},"insert":"\n"},{"attributes":{"color":"#3f3f3f"},"insert":"先调查、了解与失效有关的情况（器件类型、应用时应力条件、失效现象等），后分析失效器件。"},{"attributes":{"align":"justify","list":"bullet"},"insert":"\n"},{"attributes":{"color":"#3f3f3f"},"insert":"先做外部分析，后做内部（解剖）分析。"},{"attributes":{"align":"justify","list":"bullet"},"insert":"\n"},{"attributes":{"color":"#3f3f3f"},"insert":"先做非破坏性分析，后做破坏性分析。"},{"attributes":{"align":"justify","list":"bullet"},"insert":"\n\n"},{"attributes":{"bold":true},"insert":"一、开封前"},{"attributes":{"align":"justify"},"insert":"\n\n"},{"insert":{"image":"https://files.eteforum.com/202306/91a3b04bfcda2a16.png"}},{"attributes":{"align":"justify"},"insert":"\n\n\n"},{"attributes":{"color":"#c28d57","bold":true},"insert":"1. 对失效器件本身（线路、结构、版图、工艺、性能、材料等）应作全面了解。"},{"attributes":{"align":"justify"},"insert":"\n"},{"attributes":{"color":"#c28d57","bold":true},"insert":"2. 失效情况的调查"},{"attributes":{"align":"justify"},"insert":"\n\n"},{"attributes":{"color":"#3f3f3f"},"insert":"失效器件类型、外壳、封装类型、生产厂、生产日期和批号；"},{"attributes":{"align":"justify","list":"bullet"},"insert":"\n"},{"attributes":{"color":"#3f3f3f"},"insert":"使用单位，使用器件的设备名称、台号、失效部位，累计运行时间，器件在设备中的功能；"},{"attributes":{"align":"justify","list":"bullet"},"insert":"\n"},{"attributes":{"color":"#3f3f3f"},"insert":"失效时的环境（调试、运行、高温、振动、冲击、验收成现场使用），失效时间，失效现象（开路、短路、无功能、参数变化、判别标准等），失效判断人。"},{"attributes":{"align":"justify","list":"bullet"},"insert":"\n"},{"attributes":{"align":"justify"},"insert":"\n"},{"attributes":{"color":"#c28d57","bold":true},"insert":"3. 复测电特性，验证失效情况。"},{"insert":"\t"},{"attributes":{"color":"#3f3f3f"},"insert":"所得结果是否与所报告的失效情况相符；不符时要考虑是否器件特性改变；是时好时坏的问题，还是原来数据有误；"},{"attributes":{"align":"justify"},"insert":"\n"},{"attributes":{"color":"#c28d57","bold":true},"insert":"4. 初步电测试。"},{"insert":"\t"},{"attributes":{"color":"#3f3f3f"},"insert":"又分功能测试和非功能测试，前者对全部电参数进行测试，后者为脚与脚之间的测试。并与同类正常器件比较由差别估计失效的部位与原因。"},{"attributes":{"align":"justify"},"insert":"\n"},{"attributes":{"color":"#c28d57","bold":true},"insert":"5. 外观镜检。"},{"attributes":{"color":"#3f3f3f"},"insert":"目检或在至少放大30倍的显微镜下进行。内容包括外引线、电镀层、锡焊等，有无机械损伤，腐蚀，标记完整性如何等。对任何异常情况，应进行拍照记录。"},{"attributes":{"align":"justify"},"insert":"\n"},{"attributes":{"color":"#c28d57","bold":true},"insert":"6. 对管壳进行密封性检查"},{"attributes":{"color":"#3f3f3f"},"insert":"，是否存在漏气。"},{"attributes":{"align":"justify"},"insert":"\n"},{"attributes":{"color":"#c28d57","bold":true},"insert":"7. 必要时进行X射线照相"},{"attributes":{"color":"#3f3f3f"},"insert":"，以检查器件结构是否正常，有无多余物存在，也可进行管壳内水汽含量分析，判别失效是否与水汽有关。"},{"attributes":{"align":"justify"},"insert":"\n"},{"attributes":{"color":"#c28d57","bold":true},"insert":"8. 失效模式的分类与统计。"},{"attributes":{"align":"justify"},"insert":"\n\n\n"},{"attributes":{"bold":true},"insert":"二、开封后"},{"attributes":{"align":"justify"},"insert":"\n\n\n"},{"attributes":{"color":"#c28d57","bold":true},"insert":"1. 内部镜检："},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":{"image":"https://files.eteforum.com/202306/5f0f4c03fbf68378.png"}},{"attributes":{"align":"justify"},"insert":"\n"},{"attributes":{"align":"center"},"insert":"\n"},{"attributes":{"color":"#595959"},"insert":"楔形键合第一点尾部的开裂"},{"attributes":{"align":"center"},"insert":"\n"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"\t"},{"attributes":{"color":"#3f3f3f"},"insert":"用立体显微镜或高倍显微镜检查芯片，确认内部材料、设计、结构、工艺上是否有误用、缺陷、或异常情况，是否有烧毁、腐蚀迹象，键合丝的形状、尺寸、位置是否正确，芯片有无裂纹、外来异物，颜色是否正常，铝条是否有电迁移、发黑、长毛、出现象紫斑等现象。特别要观察失效部位的形状、尺寸、大小、颜色、结构等。必要时要进行拍照记录。"},{"attributes":{"align":"justify"},"insert":"\n\n"},{"attributes":{"color":"#c28d57","bold":true},"insert":"2. 电学测试："},{"attributes":{"align":"justify"},"insert":"\n\n"},{"insert":{"image":"https://files.eteforum.com/202306/24553730ceebf417.png"}},{"attributes":{"align":"center"},"insert":"\n"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"\t"},{"attributes":{"color":"#3f3f3f"},"insert":"与开封前测试结果加以比较，是否有改变，管壳内是否有水汽的影响。进一步可将表面氧化层、铝条去掉，用机械探针扎在有关节点上进行静态（动态）测试、判断被隔离部分是否性能正常，分析失效原因。"},{"attributes":{"align":"justify"},"insert":"\n\n"},{"attributes":{"color":"#3f3f3f","bold":true},"insert":"各涂层或薄膜可用不同方法去除"},{"attributes":{"align":"center"},"insert":"\n"},{"attributes":{"align":"justify"},"insert":"\n"},{"attributes":{"color":"#3f3f3f"},"insert":"芯片表面涂层可用化学法腐蚀去除。 "},{"attributes":{"align":"justify","list":"bullet"},"insert":"\n"},{"attributes":{"color":"#3f3f3f"},"insert":"钝化层可用氟等离子体刻蚀，对SiO2及PSG层也可用稀氢氟酸（加少量氟化铵）腐蚀；Si3N4用氟化铵:醋酸:去离子水＝1:1:1（体积）混合液腐蚀；聚酰亚铵用发烟硝酸腐蚀；对多晶硅用1mlHF十26ml HNO3十33m1CH2COOH混合液腐蚀。"},{"attributes":{"align":"justify","list":"bullet"},"insert":"\n"},{"attributes":{"color":"#3f3f3f"},"insert":"铝层用激光束切断，或用稀硫酸(或盐酸)溶去。"},{"attributes":{"align":"justify","list":"bullet"},"insert":"\n"},{"attributes":{"align":"justify"},"insert":"\n"},{"attributes":{"color":"#c28d57","bold":true},"insert":"3. 断面观察"},{"attributes":{"align":"justify"},"insert":"\n\n"},{"insert":{"image":"https://files.eteforum.com/202306/387f86f8c85680cf.png"}},{"attributes":{"align":"center"},"insert":"\n"},{"attributes":{"color":"#595959"},"insert":"Al-Au 金属间化合物形貌"},{"attributes":{"align":"center"},"insert":"\n"},{"attributes":{"align":"justify"},"insert":"\n"},{"attributes":{"color":"#3f3f3f"},"insert":"对失效可疑部位如PN结、芯片断面、管壳封接处等，可取下相关部分浇入石腊或塑料中，制成磨片。对磨片经过研磨、抛光、腐蚀及染色等步骤，将观察目标暴露出来，在显微镜下观察、拍照。"},{"attributes":{"align":"justify"},"insert":"\n\n"},{"attributes":{"color":"#3f3f3f"},"insert":"4. 必要时进行微区表面分析。"},{"attributes":{"align":"justify"},"insert":"\n\n\n\n"},{"insert":{"image":"https://files.eteforum.com/202306/bfef40720804ec0b.png"}},{"attributes":{"align":"justify"},"insert":"\n\n"},{"insert":{"image":"https://files.eteforum.com/202306/c74c3671a75ed534.png"}},{"attributes":{"align":"justify"},"insert":"\n\n"},{"attributes":{"bold":true},"insert":"三、军标GJB-548A"},{"attributes":{"align":"justify"},"insert":"\n\n"},{"attributes":{"color":"#3f3f3f"},"insert":"我国军标GJB-548A中方法5003中具体规定了失效分析程序，可以参考。"},{"attributes":{"align":"justify"},"insert":"\n\n"},{"insert":"来源：半导体封装工程师之家"},{"attributes":{"align":"justify"},"insert":"\n"},{"attributes":{"color":"var(--weui-FG-0)"},"insert":"半导体工程师"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"半导体经验分享，半导体成果交流，半导体信息发布。半导体行业动态，半导体从业者职业规划，芯片工程师成长历程。"},{"attributes":{"align":"justify"},"insert":"\n"},{"insert":"\n"}]